The reverse breakdown voltage of the 1N4007 diode is 1000 volts.
maximum forward current in diode IN4007 is 30 amp
difference between detector and diode
A: 1N400X signify a power rectifier series the last the X define the reverse voltage breakdown sustainable capability A 1N4001 is for example a 50V reverse voltage breakdown A 1N4007 is a 1000V reverse voltage breakdown
The difference between the pn-junction diode and the zener diode is that the pn-junction diode is used for rectification while the zener diode is used for rectification and stabilization. Also, the zener diode can function in the breakdown region while the pn-juntion diode can not function in that regime.
The difference in the 1N4007 diode and the 1N4007S diode is the voltage. The 1N4007S has a higher voltage but the meaning of the S is not listed.
THE 1n4000 series are classified as rectifiers for low frequency use having a big capacitance at the junction the other are diodes that have a very small capacitance therefore a quick disconnect time from conducting to off.
The reverse breakdown voltage of the 1N4007 diode is 1000 volts.
general purpose diode with 1000V reverse breakdown.
The 1N4007 is a diode with forward current rating of 1 ampere, and a reverse voltage rating of 1,000 volts.
maximum forward current in diode IN4007 is 30 amp
difference between detector and diode
The entire 1N40xx series of power diodes are all silicon. The OA79 small signal diode is germanium.
A 1n4007 is a diode and not a transistor, the 4007 don't really represent anything, the 1n4007 is a axial lead standard recovery rectifier, working peak reverse voltage = 1000V, the forward current for this device = 1 Amp. More data about it can be find in the data sheet.
Zener diode is heavily doped pn junction diode.
gunn diode is transfered electron device & PIN diode is semiconductor device
what is the difference between reverse characteristics of zener diode and a practical diode ?