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The maximum spectral response of germanium is in the infrared region, while the maximum spectral response of silicon is in the visible light region. Germanium has a broader spectral response range compared to silicon.
Germanium has a maximum spectral response at around 1.8 µm wavelength, while silicon's maximum spectral response is at around 1.1 µm wavelength.
Silicon transistors are preferred to germanium transistors because they exhibit higher thermal stability and are less prone to temperature variations. Silicon transistors also have a higher maximum operating temperature, improved frequency response, and are more reliable in terms of long-term performance. Additionally, silicon is more abundant and easier to work with in manufacturing processes compared to germanium.
A germanium diode has a lower forward voltage drop compared to a silicon diode, typically around 0.3V for germanium and 0.7V for silicon. Germanium diodes also have a higher reverse current leakage compared to silicon diodes.
Germanium has a smaller bandgap compared to silicon, leading to higher intrinsic carrier concentration and hence greater leakage current. Additionally, germanium has a higher intrinsic carrier mobility, which can further contribute to increased leakage current compared to silicon.
The knee voltage for silicon is approximately 0.7V, while for germanium it is around 0.3V. The knee voltage is the voltage at which a diode starts conducting significantly.