FET's (field effect transistors) are unipolar devices because unlike BJT's that use both electron and hole current, they operate only with one type of charge carrier. BJT is a current-controlled device; that is the base current controls the amount of collector current. FET is a voltage-controlled device, where voltave between two of the terminals (gate and source) controls the current through the device. BJT's have a low input impedance ( ~1k -3k ohms), while FET's have a very high input impedance (~10^11 ohms). Consequently FET's have a lower power consumption. BJT's produce more noise than FET's .
FET's have a slower switching speed . BJT's are subject to thermal runway while FET's are immune to this problem. BJT's have a higher cutoff frequencey and a higher maximum current then FET's. FET's are easy to fabricate in large scale and have higher element density the BJT's.
Mainly there are two types of transistors. They are BJT (Bipolar Junction Transistors) and FET(Field Effect Transisters). In BJT, there are two types called PNP and NPN. Actually NPN means a BJT transister.
The structure of a UJT is quite similar to that of an N-channel JFET. The main difference is that P-type (gate) material surrounds the N-type (channel) material in case of JFET and the gate surface of the JFET is much larger than emitter junction of UJT.
BJT stands for bipolar junction transistor because it is composed of two types of semiconductors (P and N-type) rather than just one type like a unipolar transistor. This allows for both electron and hole current flow in the device, giving it its bipolar characteristic.
The phase difference between two waves is directly proportional to the path difference between them. The phase difference is a measure of how much the wave has shifted along its oscillation cycle, while the path difference is a measure of the spatial separation between two points where the waves are evaluated.
Transfer Characteristic of JFETThe transfer characteristic for a JFET can be determined experimentally, keeping drain-source voltage, VDSconstant and determining drain current, ID for various values of gate-source voltage, VGS. The circuit diagram is shown in fig. 9.7 (a). The curve is plotted between gate-source voltage, VGS and drain current, ID, as illustrated in fig. 9.8. It is similar to the transconductance characteristic of a vacuum tube or a transistor. It is observed that (i) Drain current decreases with the increase in negative gate-source bias(ii) Drain current, ID = IDSS when VGS = 0(iii)Drain current, ID = 0 when VGS = VD The transfer characteristic follows equation (9.1)The transfer characteristic can also be derived from the drain characteristic by noting values of drain current, ID corresponding to various values of gate-source voltage, VGS for a constant drain-source voltage and plotting them.It may be noted that a P-channel JFET operates in the same way and have the similar characteristics as an N-channel JFET except that channel carriers are holes instead of electrons and the polarities of VGS and VDSare reversed.
1-BJT is bipolar while JFET is unipolar. 2-BJT has low input impedence while JFET has high input impedence. 3-JFET has low power discipation as compared to BJT. 4-JFET has low noise as compared to BJT. 5-BJT is current controlled while JFET is voltage controlled. 6-JFET is mostly used in digital circuits.
BJT is Bipolar junction transistor FET is Field effect Transistor It is a current controlled device It is voltage controlled device
An advantage of JFET is stable high current operation. A disadvantage of JFET is low capacitance. An advantage of BJT is constant voltage operation. A disadvantage of BJT is low thermal conductance.
BJT is a example for current controll device. And JFET is a voltage controlled device.
mainly i will tell ttwo advantages:- 1)in FET "thermal runaway" never occurs but in bjt it occurs easily...thermal runaway means overheating and damage of fet due to different biasing voltages.. 2) since FET is a unipolar device so only one carrier type is required here ,but bjt is a bipolar device .. 3) FET is smaller in size than BJT of same rating. i mean to say that at the place of 10 bjts we can use 90 FETs ..so area cosumption is less
A Jfet works by applying voltage to the drain of the jfet. A jfet will then conduct across from drain to source.
either field effect (JFET, MOSFET) or junction (BJT) or point contact (usually considered obsolete)either small signal or high powereither electron majority carrier (N-channel FET, NPN BJT) or hole majority carrier (P-channel FET, PNP BJT)either linear (used in amplifier and oscillator circuits) or switching (used in digital logic circuits)etc.
Mainly there are two types of transistors. They are BJT (Bipolar Junction Transistors) and FET(Field Effect Transisters). In BJT, there are two types called PNP and NPN. Actually NPN means a BJT transister.
either field effect (JFET, MOSFET) or junction (BJT) or point contact (usually considered obsolete)either small signal or high powereither electron majority carrier (N-channel FET, NPN BJT) or hole majority carrier (P-channel FET, PNP BJT)either linear (used in amplifier and oscillator circuits) or switching (used in digital logic circuits)etc.
The basic theory of operation is the same, but the device structure is different. With both a MOSFET and a JFET, a conductive channel is established between two terminals (the drain and the source). The structure of the gate terminal makes the difference between the two. In a MOSFET, the metal gate is separated from the channel by an insulator (the O in MOSFET means Oxide, the insulator). In a JFET the gate is a doped region essentially within the conductive channel.
A transistor (bipolar junction transistor BJT) will only conduct in ONE DIRECTION. And the voltage drop is not Ohmic - it is *NOT* strictly related to current flow. If you're referring to a Field-Effect Transitor (JFET, IGFET, MOSFET, etc), then the device may be able to be used in a bidirectional circuit. But the question stated "transistor", which is understood to be a BJT.
A transistor (bipolar junction transistor BJT) will only conduct in ONE DIRECTION. And the voltage drop is not Ohmic - it is *NOT* strictly related to current flow. If you're referring to a Field-Effect Transitor (JFET, IGFET, MOSFET, etc), then the device may be able to be used in a bidirectional circuit. But the question stated "transistor", which is understood to be a BJT.