FET's (field effect transistors) are unipolar devices because unlike BJT's that use both electron and hole current, they operate only with one type of charge carrier. BJT is a current-controlled device; that is the base current controls the amount of collector current. FET is a voltage-controlled device, where voltave between two of the terminals (gate and source) controls the current through the device. BJT's have a low input impedance ( ~1k -3k ohms), while FET's have a very high input impedance (~10^11 ohms). Consequently FET's have a lower power consumption. BJT's produce more noise than FET's .
FET's have a slower switching speed . BJT's are subject to thermal runway while FET's are immune to this problem. BJT's have a higher cutoff frequencey and a higher maximum current then FET's. FET's are easy to fabricate in large scale and have higher element density the BJT's.
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JFET (Junction Field-Effect Transistor) is a voltage-controlled device where current flow is controlled by an electric field across a semiconductor junction. BJT (Bipolar Junction Transistor) is a current-controlled device where current flow is controlled by the amount of current entering the base terminal. JFETs are majority carrier devices, while BJTs are minority carrier devices.
A BJT (bipolar junction transistor) is a general term that includes both NPN and PNP transistors. An NPN transistor has a layer of P-type semiconductor sandwiched between two N-type layers, allowing current to flow from the collector to the emitter when a small current is applied to the base.
FET (Field-Effect Transistor) and UJT (Unijunction Transistor) are both types of transistors but operate differently. FET is a voltage-controlled device, while UJT is a current-controlled device. FETs are commonly used in amplifiers, while UJTs are often utilized in oscillators and timing circuits.
BJT stands for bipolar junction transistor because it is composed of two types of semiconductors (P and N-type) rather than just one type like a unipolar transistor. This allows for both electron and hole current flow in the device, giving it its bipolar characteristic.
The phase difference between two waves is directly proportional to the path difference between them. The phase difference is a measure of how much the wave has shifted along its oscillation cycle, while the path difference is a measure of the spatial separation between two points where the waves are evaluated.
The equation for calculating the phase difference between two waves is: Phase Difference (2 / ) (x) Where: Phase Difference is the difference in phase between the two waves is the wavelength of the waves x is the difference in position between corresponding points on the waves