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The basic difference is between JFET and enhanced MOSFET,although the construction of JFET and depletion MOSFET is different but their most of the characteridtics are same,i.e shockly equation can be applied on both of them,but in JFET we cant give to gate voltage, the +ve value,because it does not works, but in depletion we can give,but some limited +ve value. Now enhanced MOSFET is different,shockly equation cant be applied.The transfer characteristics are purely in +ve Vg region. i.e for E-MOSFET Vg should be > 0,for its proper function.
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FranFETs (field effect transistors) have a high impedance insulated gate, and are primarily voltage-controlled. Junction FETs and metal-oxide-semiconductor FETs are two good examples. BJTs (bipolar junction transistors) equivalent terminal, the base, is relatively low-impedance, and so BJTs are primarily current-controlled. The gate insulator is very thin, and subject to breakdown due to static discharge. This is why many IC's are static sensitive. Since the base of a BJT is not insulated, it does not suffer from this particular failure mode.
de mosfet can be operated in both modes ie depletion(-ve suppy) as well as enhancement mode(+ve supply) in case of n-channel mosfet. but e mosfet only operated in enhancement mode ie positive supply at gate(in case of n channel). Also,e mosfet is normally in off state always bt it is not with de mosfet.
An EMOSFET is normally non-conducting but conducts when the channel is enhanced by applying a voltage to the gate and pulling carriers into the channel.
a DEPLETION TYPE mosfet normally conducts but becomes more n more non-conducting as the carriers are depleted or pulled out of the channel by applying a voltage. the polarity of the vtg here depends upon whether the MOSFET is n channel or p channel. :)
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