BJT is nothing but the addition of two PN junction diodes.
There are two types of BJT= P-N-P or N-P-N
P-N N-P
+ or +
N-P = P-N-P P-N =N-P-N
SCR is a thyristor which is made adding two BJTs. Of course they are made of sillicon.
Exempli gratia: P-N-P
+ +
N-P-N = P-N-P-N comparison between scr bjt and mosfet Check the related link for further information.
A diode mainly consists of only 2 terminals(anode,cathode).A SCR mainly contains one more terminal called GATE.The main purpose of the gate in an SCR is just to provide pulses.The main draw back of SCR is it is not fully controllable device.
Disadvantage:Easy to damage when compared to BJT
UJT is the voltage controlled device.in which only one mejority carriers are responsible for current flowing. UJT is one junction transistor and it is three terminal emitter and two base. BJT is the current controlled device. in which both mejority and minority carrier are responsiblefor current flowing. this type of transistor consists of two junction and three terminal these are : emitter , base , collector.
silicon controlled rectifier is a 3 terminal 4 layer device which has 2 consecutive P N junctions here the three terminals called anode, cathode and gate gate controls the conduction of the scr but diode just conducts in forward bias and blocks in reverse bias
The SCR's gate electrode is used to turn the SCR on, i.e. fire it.
neither is better, it depends on purpose
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An SCS has an additional gate - the anode gate. It is physically smaller than an SCR and has smaller leakage and holding currents than an SCR.
Mainly there are two types of transistors. They are BJT (Bipolar Junction Transistors) and FET(Field Effect Transisters). In BJT, there are two types called PNP and NPN. Actually NPN means a BJT transister.
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A diode mainly consists of only 2 terminals(anode,cathode).A SCR mainly contains one more terminal called GATE.The main purpose of the gate in an SCR is just to provide pulses.The main draw back of SCR is it is not fully controllable device.
UJT (UniJunction Transistor): It is a transistor with only one junction and three terminals: an emitter (E) and two bases (B1 and B2). BJT (Bipolar Junction Transistor): This type of transistor consists of two junctions and three terminals, namely Emitter "E", Base "B" and Collector"C". There are two types of BJT, i) PNP and ii) NPN.
FET's (field effect transistors) are unipolar devices because unlike BJT's that use both electron and hole current, they operate only with one type of charge carrier. BJT is a current-controlled device; that is the base current controls the amount of collector current. FET is a voltage-controlled device, where voltave between two of the terminals (gate and source) controls the current through the device. BJT's have a low input impedance ( ~1k -3k ohms), while FET's have a very high input impedance (~10^11 ohms). Consequently FET's have a lower power consumption. BJT's produce more noise than FET's . FET's have a slower switching speed . BJT's are subject to thermal runway while FET's are immune to this problem. BJT's have a higher cutoff frequencey and a higher maximum current then FET's. FET's are easy to fabricate in large scale and have higher element density the BJT's.
Bjt is bipolar because in bjt the conduction of current is due to the electrons as well as holes
Disadvantage:Easy to damage when compared to BJT
UJT is the voltage controlled device.in which only one mejority carriers are responsible for current flowing. UJT is one junction transistor and it is three terminal emitter and two base. BJT is the current controlled device. in which both mejority and minority carrier are responsiblefor current flowing. this type of transistor consists of two junction and three terminal these are : emitter , base , collector.
Bipolar junction transistor(BJT)